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IRF7509PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95397 IRF7509PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

N-Ch P-Ch VDSS 30V -30V RDS(on) 0.11Ω 0.20Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.

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