IRF7509PBF mosfet equivalent, power mosfet.
N-Ch P-Ch VDSS 30V -30V RDS(on) 0.11Ω 0.20Ω
The new Micro8 package, with half the footprint area of the standard SO-8.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.
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